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| 2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor designed with high collector current, low VCEsat. OUTLINE DRAWING 2.5 0.5 1.5 0.5 Unitmm 2.90 1.90 FEATURE High collector current ICMAX=-500mA Low collector to emitter saturation voltage VCEsat<-0.4Vmax(IC=-150mAIB=-15mA 0.95 0.95 00.1 1.1 APPLICATION For switching application, small type motor drive application. Notice: The dimension without tolerance represent central value. TERMINAL CONNECTOR BASE EIAJSC-59 EMITTER JEDECTO-236 COLLECTOR Resemblance MAXIMUM RATINGSTa=25 VCEO VCBO VEBO IC PC Tj Tstg Collector to Emitter voltage Collector to Base voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature -60 -60 -5 -500 200 150 -55150 V V V mA mW MARKING Type Name 0.8 AW ELECTRICAL CHARACTERISTICSTa=25 Symbol VBRCEO VBRCBO VBREBO ICBO IEBO hFE VCEsat VBEsat fT Cob Parameter C to E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage B to E saturation voltage Gain band width product Collector output capacitance Test condition IC=-1mAIB=0 IC=-10uAIE=0 IE=-10uAIC=0 VCB=-50VIE=0 VEB=-3VIC=0 IC=-150mAVCE=-10V IC=-150mAIB=-15mA IC=-150mAIB=-15mA IE=50mAVCE=-20Vf=100MHz VCB=-10Vf=1MHz Min -60 -60 -5 Limits Typ Max Unit V V V nA nA --V V MHz pF 100 -100 -100 300 -0.4 -1.3 8 200 ISAHAYA ELECTRONICS CORPORATION 0.16 0.4 2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 300 COLLECTOR DISSIPATION Pc(mW) 250 200 150 100 50 0 0 50 100 AMBIENT TEMPERATURE Ta() DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 -100 IB=-500uA IB=-400uA COMMON EMITTER OUTPUT Ta=25 COLLECTOR CURRENT IC(mA) -80 IB=-300uA -60 IB=-200uA -40 IB=-100uA -20 IB=0uA -0 150 -0 -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE(V) -10 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 500 DC FORWARD CURRENT GAIN hFE(-) VCE=-10V GAIN BAND WIDTH PRODUCT fT(MHz) 400 Ta=25 VCE=-20V 1000 25 85 300 200 100 -40 100 10 -0.1 0 -1 -10 -100 COLLECTOR CURRENT IC(mA) -1000 1 10 100 EMITTER CURRENT IE(mA) 1000 COMMON EMITTER TRANSFER -500 COLLECTOR OUTPUT CAPACITANCE Cob(pF) VCE=-10V COLLECTOR CURRENT IC(mA) -400 85 100 COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE Ta=25 IE=0 f=1MHz -300 10 -200 25 -40 -100 -0 -0 -0.2 -0.4 -0.6 -0.8 -1 BASE TO EMITTER VOLTAGE VBE(V) -1.2 1 0.1 1 10 COLLECTOR TO BASE VOLTAGE VCB(V) 100 ISAHAYA ELECTRONICS CORPORATION 2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT -1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)(mV) IC/IB=10 AREA OF SAFE OPERATION -10 Ta=25 SINGLE PULSE 100msec COLLECTOR CURRENT IC(A) -1 1sec ICmax=-0.5A 10msec 1msec -100 85 -0.1 DC(200mW) -10 -40 25 -0.01 -1 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) -1000 -0.001 -0.01 -0.1 -1 -10 -100 -1000 COLLECTOR TO EMITTER VOLTAGE VCE(V) ISAHAYA ELECTRONICS CORPORATION VCEOmax=-60V Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Nov.2008 |
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